Relazione su invito
First results with Hydrogenated Amorphous Silicon devices to detect ionizing radiation fluxes.
Servoli L., Calcagnile L., Caricato A. P., Cirrone G.A.P., Croci T., Di Lorenzo R., Fabi M., Falciglia P.P., Frontini L., Cuttone G., Gianfelici B., Grimani C., Ionica M., Italiani M., Kanxheri K., Large M., Liberali V., Martino M., Maruccio G., Mazza G., Menichelli M., Milluzzo G.G., Monteduro A.G., Morozzi A., Moscatelli F., Pallotta S., Paolucci M., Passeri D., Patti I.V., Pedio M., Petasecca M., Petringa G., Peverini F., Piccolo L., Placidi P., Quarta G., Rizzato S., Rossi G., Stabile A., Talamonti C., Torrisi A., Wheadon R.J., Villani M., Wyrsch N.
The INFN HASPIDE project (Hydrogenated Amorphous Silicon ---a-Si:H--- DEtectors) aims to develop a-Si:H sensors to be employed in three use cases: 1) monitoring of ionizing radiation beams, of both particles and photons; 2) detection of Solar Energetic Particles in the spatial environment; 3) neutron detection after deposition of a thin layer of $^{10}B$ over the a-Si:H structures. a-Si:H devices have already been used to monitor proton therapeutic beams at CNAO. The material showing intrinsic radiation resistance can be deposited in thin layers over many different substrates, including plastic ones like Kapton or Mylar. The radiation hardness will ensure the sensor operation also in very harsh environments. On the other hand the possibility to realise detector in matrix configurations deposited on flexible thin substrate could provide innovating monitoring system at the accelerators-in-the-air exit window giving real-time information about beam size and flux. The first results with prototypes exposed to X-ray beams show a linear response in current as a function of the dose rate, with a relative uncertainty of about $1\mbox{--}2%$ with two types of devices: p-i-n diodes and charge selective contacts.