Advanced electrical characterization of spin transport in ferroelectric Rashba semiconductor GeTe.

Fagiani F., Nessi L., Bridarolli D., Gandini G., Cantoni M., Bertacco R., Rinaldi C.
  Martedì 13/09   09:00 - 13:30   Aula D - Marianna Ciccone   II - Fisica della materia   Presentazione
The energy consumption of information and communication technology is constantly increasing and close to turn unsustainable. An engaging approach towards ultra-low power devices beyond-CMOS has been delineated by Intel in avantgarde scientific works. They underlined the potential of materials characterized by collective states of matter (such as ferromagnets and ferroelectrics) in combination with dissipation-less spin currents. We aim at investigating ferroelectric Rashba semiconductors (FERSC) like GeTe and SnTe, as they have shown an enormous potential in this context, thanks to the intrinsic link between ferroelectric polarization and spin Hall effect, which enables the non-volatile ferroelectric control of spin-to-charge conversion. Here we combine conventional e-beam lithography with the innovative thermal scanning probe lithography to demonstrate ground-breaking devices, allowing for quantification of spin-to-charge conversion efficiency and spin diffusion length. Starting from a material science perspective, this research will show how ferroelectric polarization and spin can play a role towards beyond-CMOS devices capable of non-volatile computing.