Advances in dosimetric characterization of a new waterproof silicon carbide detector.

The physical characteristics of Silicon Carbide (SiC) based devices, such as wide bandgap, ultra-low leakage current, high electron saturation velocity, almost near tissue-equivalence, high radiation resistance, dose rate independent response and linearity with energy in a wide dynamic range, have attracted the attention of the scientific community interested in the development of new detectors for relative dosimetry. In this work a new generation of SiC device based on p-n junction technology was investigated for dosimetric applications. The detector was manufactured in the context of a collaboration between INFN, IMM-CNR and STM. The adopted detector, built by using new technological processes, presents a detection area of $1 {cm^{2}}$ and is embedded in epoxy resin to make it waterproof. The study aimed at evaluating the potential use of the SiC detector as a relative dosimeter, in accordance with the dosimetric protocols in force (IAEA TRS-398). The detector response was tested in water with X-ray, electron and proton beam. The released absolute dose was evaluated using a standard ionization chamber.