Advances in dosimetric characterization of a new waterproof silicon carbide detector.

Guarrera M., Petringa G., Amato A., Catalano R., Kurmanova A., Massara A., Messina G., Passarello D., Tudisco S., Zappalà E., Cirrone G. A. P.
  Martedì 13/09   09:00 - 13:30   Aula E - Rosalind Franklin   V - Biofisica e fisica medica   Presentazione
The physical characteristics of Silicon Carbide (SiC) based devices, such as wide bandgap, ultra-low leakage current, high electron saturation velocity, almost near tissue-equivalence, high radiation resistance, dose rate independent response and linearity with energy in a wide dynamic range, have attracted the attention of the scientific community interested in the development of new detectors for relative dosimetry. In this work a new generation of SiC device based on p-n junction technology was investigated for dosimetric applications. The detector was manufactured in the context of a collaboration between INFN, IMM-CNR and STM. The adopted detector, built by using new technological processes, presents a detection area of $1 {cm^{2}}$ and is embedded in epoxy resin to make it waterproof. The study aimed at evaluating the potential use of the SiC detector as a relative dosimeter, in accordance with the dosimetric protocols in force (IAEA TRS-398). The detector response was tested in water with X-ray, electron and proton beam. The released absolute dose was evaluated using a standard ionization chamber.